Ka波段GaN HEMT大功率、高效率放大器MMIC  

Ka-Band GaN HEMT High Power High Efficiency Power Amplifier MMIC

作　　者：杜鹏搏[1] 徐伟[1] 王生国[2] 高学邦[1] 蔡树军[2] 

机构地区：[1]中国电子科技集团公司第十三研究所,石家庄050051 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2013年第5期338-341,360,共5页Semiconductor Technology

摘　　要：采用GaN HEMT工艺,解决了GaN功率HEMT材料结构、大信号模型提取、电路设计、芯片测试等难题,分析了如何提高电路效率,并利用ADS软件对电路进行了原理图与版图优化设计,成功研制出Ka波段GaN大功率、高效率功率放大器MMIC。该单片功率放大器包含三级级联放大电路,采用了Wilkinson功率分配/合成网络,采用阻性网络消除奇模振荡,输入/输出阻抗均匹配至50Ω。电路在34～36 GHz下,饱和输出功率大于6 W,功率增益大于13 dB,功率附加效率大于15%,芯片尺寸3.5 mm×1.8 mm,与目前国际报道的最好水平相当。Using GaN HEMT technology, some problems about the structure of GaN power HEMT, large signal model extraction, circuit design and MMIC measurement were solved. The method to raise the efficiency was analyzed, the schematics and layout were designed and optimized using ADS software. The Ka-band power amplifier with high power and high efficiency was fabricated. The power amplifier consisited of 3-stage and utilized the wilkison power dividing/combining network, the input and output impedances were matched to 50Ω. The test result shows the saturation output power is more than 6 W, the power gain is more than 13 dB, and the power added efficiency （PAE） is more than 15% from 34 to 36 GHz, the chip size is 3.5 mm × 1.8 mm. This result is as good as the international level reported at present.

关 键 词：KA波段 氮化镓 单片微波集成电路 高电子迁移率晶体管 高功率 高效率 

分 类 号：TN43[电子电信—微电子学与固体电子学]