基于GaN的多倍频程宽带功率放大电路设计  

Design of GaN Based Multi-Octave Wideband Power Amplification Circuit

作　　者：谢晓峰[1,2] 肖仕伟[3] 郑贵强[1] 

机构地区：[1]中国工程物理研究院电子工程研究所,四川绵阳621900 [2]中国工程物理研究院研究生部,北京100084 [3]中国工程物理研究院高新技术装备发展中心,北京100086

出　　处：《半导体技术》2013年第5期356-360,共5页Semiconductor Technology

摘　　要：随着第三代半导体GaN技术的发展成熟,GaN功率器件在各种电子系统中逐渐得到了广泛应用。由于GaN的功率器件具有击穿场强高和功率密度大的特点,因此很适合应用于功率放大技术中。结合商用GaN高电子迁移率晶体管的自身特性,基于GaN高电子迁移率晶体管的大信号模型,采用电抗匹配的方式,通过ADS软件进行仿真优化,设计并制作了0.5～4 GHz的宽带GaN功率放大器。最终测试结果表明,功率放大器在0.5～4 GHz的频带内,线性增益大于8.5 dB,增益平坦度为±1.3 dB。功率放大器饱和输出功率大于7 W,各个频点的最大功率附加效率大于22%,其中在1～3.75 GHz内饱和输出功率大于10 W,最大功率附加效率均大于40%。With the development of third generation semiconductor GaN, GaN based power devices are more and more widely applied in many electronic systems. These devices can be competitive candidates in power amplification since they have the advantages of high breakdown voltage and large output power density. According to its own characteristic, a GaN high electron mobility transistor （HEMT） was employed to design a 0.5 -4 GHz wideband power amplifier using the reactive matched method with the ADS simulation software basing on its large signal model. The measured results show that the power amplifier can work in a 0.5 -4 GHz frequency range with a linear gain larger than 8.5 dB with a gain flatness of ＋ 1.3 dB. In this frequency range, the saturated output power is larger than 7 W, and the maximum power added efficiency （PAE） of each frequency are larger than 22%. Specifically, the saturated output power and maximum PAE of each frequency in 1 - 3.75 GHz is above 10 W and 40%.

关 键 词：氮化镓 功率放大器 宽带 第三代半导体 微波放大器 

分 类 号：TN722[电子电信—电路与系统]