双量子阱中光子辅助电子自旋隧穿  

Photon-assisted electron spin tunnelling in double-well potential

作　　者：李春雷[1] 徐燕[1] 张燕翔[1] 叶宝生[1] 

机构地区：[1]首都师范大学初等教育学院微尺度功能材料实验室,北京100048

出　　处：《物理学报》2013年第10期374-379,共6页Acta Physica Sinica

基　　金：国家自然科学基金专项基金(批准号:11147198)资助的课题~~

摘　　要：采用单电子有效质量近似理论,Floquet理论和传递矩阵方法,对包含时间周期场的双量子阱中单电子的自旋隧穿特性进行了研究,对InP/InAs半导体材料进行了数值计算.重点研究了Rashba型和Dresselhaus型自旋轨道耦合、量子阱结构以及偏压对电子隧穿的影响.这些结果可以为设计和调控半导体自旋电子器件提供一定的理论依据.Within the framework of the single-band effective mass approximation method,the Floquet theorem,and the transfer-matrix technique,we investigate single-electron photon-assisted tunnelling in a double-well potential with the time-periodic field and Rashba and Dresselhaus spin-orbit coupling.The transmission probability displays statellite peaks on both sides of the field-free resonant peaks.The results show that the single-electron spin tunnelling can be controlled through changing the structure of the doublequantum-well and the intensity of the applied electric field.These advantages are useful for optimizing the semiconductor spintronic devices.

关 键 词：光子辅助隧穿 隧穿概率 量子阱 

分 类 号：O471.1[理学—半导体物理]