椭球量子点中施主杂质的三阶非线性光学极化率(英文)  

Third-order nonlinear optical susceptibility of a donor impurity in ellipsoidal quantum dots

作　　者：解文方[1] 

机构地区：[1]广州大学物理与电子工程学院,广东广州510006

出　　处：《广州大学学报（自然科学版）》2013年第2期10-14,共5页Journal of Guangzhou University:Natural Science Edition

基　　金：Supported by the National Natural Science Foundation of China(11074055)

摘　　要：在有效质量近似下,采用变分方法,研究椭球量子点中施主杂质的非线性光学性质.基于计算能量和波函数,以典型的半导体材料砷化镓为例,讨论椭球量子点的几何尺寸和各向异性度对施主杂质的三阶非线性极化率的影响.结果显示这些因素对椭球量子点中施主杂质的非线性光学性质有强烈的影响.By using the variation method within the effective mass approximation, we have investigated the third-order susceptibility of third harmonic generation associated with a donor impurity confined in an ellipsoidal quantum dot. With typical semiconducting GaAs-based materials, the effects of the geometrical size and the de-gree of anisotropy on the third-order susceptibility have been examined based on the computed energies and wave functions. The results show that the nonlinear optical property of a donor impurity in ellipsoidal quantum dots is strongly affected by the anisotropy degree and the dot size.

关 键 词：施主杂质 量子点 半导体 

分 类 号：O471[理学—半导体物理]