283nm背照射p-i-n型AlGaN日盲紫外探测器  

Back-illuminated 283 nm AlGaN solar-blind ultraviolet p-i-n photodetector

作　　者：王晓勇[1] 种明[1] 赵德刚[2] 苏艳梅[1] 

机构地区：[1]中国科学院半导体研究所纳米光电子实验室,北京100083 [2]中国科学院半导体研究所集成光电子国家重点实验室,北京100083

出　　处：《红外与激光工程》2013年第4期1011-1014,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金(60776047);国家863计划(2007AA03Z401)

摘　　要：实验中使用在蓝宝石衬底上用低压金属有机化学气相沉积(MOCVD)生长的AlGaN基p-i-n结构材料,通过对工艺流程的优化设计,制作了背照射p-i-n型AlGaN日盲紫外探测器,获得了较高的外量子效率。材料中p区和i区的Al组分为40%,n区Al组分为65%。探测器为直径500μm的圆形,光谱响应起止波长为260~310 nm,峰值响应波长283 nm。零偏压下,暗电流密度为2.7×10-10Acm-2,对应的R0A参数为3.8×108Ωcm2,峰值响应率为13 mA/W,对应的峰值探测率为1.97×1012cmHz1/2W-1。其在-7 V偏压下,峰值响应率达到148 mA/W,对应的外量子效率达到63%。By an optimized fabricating process, a kind of solar-blind ultraviolet photodetector was designed and fabricated used A1GaN material grown on sapphire substrate by metal organic chemical vapor deposition（MOCVD） method. The external quantum efficiency gets well improved. The structure of the device is back-illuminated p-i-n type. A1 mole factor is 40% in both p and i type layers and it is 65% in the n type lawyer. The shape of the device is a circle and its diameter is 500 p,m. The spectral response of the device starts form 260-310 nm while its peak response occurs at 283 nm. Under zero bias, a dark current density of 2.7xl0-a^Acm-2 and a responsivity of 13 mA/W are found which corresponds to a parameter R0A of 3.8x108 l^cm2 and a detection rate of 1.97x1012 cmHzl/2W-1. Under -7 V bias, the responsivity reaches to 148mA/W, correspondin~ to an external ouantum efficiency of 63%

关 键 词：紫外探测器 ALGAN 日盲 量子效率 

分 类 号：TN23[电子电信—物理电子学]