高介电常数HfAlO氧化物薄膜基电荷俘获型存储器件性能研究  

Study on the Charge Storage Characteristics of High-k(HfO_2)_(0.8)(Al_2O_3)_(0.2) Based Charge Trapping Memory Device

作　　者：汤振杰[1,2] 张婷[2,3] 殷江[2] 

机构地区：[1]安阳师范学院物理与电气工程学院,河南安阳455000 [2]南京大学材料科学与工程系固体微结构物理国家重点实验室,江苏南京210093 [3]河南大学物理与电子学院,河南开封475004

出　　处：《河南大学学报（自然科学版）》2013年第3期249-252,共4页Journal of Henan University:Natural Science

基　　金：国家自然科学基金资助项目(50972054);河南省教育厅科学技术研究重点项目(13A140021)

摘　　要：利用原子层沉积方法制备了高介电常数材料(HfO2)0.8(Al2O3)0.2薄膜基电荷俘获型存储器件,并对器件的电荷存储性能做了系统研究.利用高分辨透射电子显微(HRTEM)技术表征了(HfO2)0.8(Al2O3)0.2薄膜的形貌、尺寸及器件结构.采用4200半导体分析仪测试了存储器件的电学性能.研究发现,存储器件在栅极电压为±8V时的存储窗口达到3.5V;25℃,85℃和150℃测试温度下,通过外推法得到,经过10年的数据保持时间,存储器件的存储窗口减小量分别为17%,32%和48%;(HfO2)0.8(Al2O3)0.2薄膜基电荷俘获型存储器件经过105次写入/擦除操作后的电荷损失量仅为4.5%.实验结果表明,利用高介电常数材料(HfO2)0.8(Al2O3)0.2薄膜作为存储层能够提高器件的电荷俘获性能,具有良好的应用前景.Charge storage characteristics of High-k（HfO2）0.8（Al2O3）0.2 film based charge trapping memory devices,which were fabricated by atomic layer deposition,were systematically investigated.Employing the high-resolution transmission electron microscopy（HRTEM）,the paper analyzes the morphology of the（HfO2）0.8（Al2O3）0.2 film,size and the device structure;the electrical characteristics of the memory device was measured by using the 4200 semiconductor parameter system.It is observed that the memory window is 3.5V at the sweeping gate voltage ±8 V;At 25 ℃,85 ℃ and 150 ℃,the extrapolation of the experimental results show that the charge loss after ten years were 17 %,32%,and 48 %,respectively.For the（HfO2）0.8（Al2O3）0.2 film-based charge trapping memory device,the memory window is degraded by 4.5% after 105 Write/Erase cycles.The results demonstrate that using the（HfO2）0.8（Al2O3）0.2 film as charge trapping layer can enhance the memory storage and it will be a potential candidate in future nonvolatile flash memory device application.

关 键 词：高介电常数 HfAlO氧化物 电荷存储 原子层沉积 

分 类 号：O469[理学—凝聚态物理] TB321[理学—电子物理学]