碳化硅衬底精密加工技术  

A Fine Processing Technology of Silicon Carbide

作　　者：冯玢[1] 潘章杰[1] 王磊[1] 郝建民[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300222

出　　处：《电子工业专用设备》2013年第5期23-26,64,共5页Equipment for Electronic Products Manufacturing

摘　　要：介绍了一种包含多线切割、研磨、抛光等主要工序的75 mm(3英寸)碳化硅衬底精密加工技术,该技术成功对本单位自主研制的碳化硅衬底进行精密加工。实验过程中使用了几何参数测试仪、强光灯、微分干涉显微镜(DIC)、原子力显微镜(AFM)、扫描电镜(SEM)等检测手段对加工工艺效果进行监控。通过该技术制备出了几何尺寸参数良好、表面质量优良的碳化硅晶片。A fine processing technology which was consist of sawing,grinding and polishing was investigated in this article.Ingots that were produced by our own were processed in the experiment.Geometric Parameter Tester,Bright Lights,Differential Interference Microscopy（DIM）,Atomic Force Microscope（AFM） and Scanning Electron Microscope（SEM） were used to assess the result of the experiment.Wafers with excellent geometric Parameters and surface quality were made by the method.

关 键 词：碳化硅衬底 精密加工 多线切割 研磨 抛光 粗糙度 

分 类 号：TN304.24[电子电信—物理电子学]