一种改进的考虑划痕的关键面积计算模型和方法  

An improved scratch-concerned critical area extraction method for IC manufacturing

作　　者：叶翼[1] 朱椒娇[1] 张波[1] 史峥[1] 严晓浪[1] 

机构地区：[1]浙江大学电气学院超大规模集成电路设计研究所,浙江杭州310027

出　　处：《电路与系统学报》2013年第2期353-358,共6页Journal of Circuits and Systems

基　　金：国家"十一五"高端通用芯片科技重大专项基金资助项目(2008ZX01035-001-06)

摘　　要：关键面积计算对于集成电路成品率的准确预测有着重要的意义。为了得到精确的结果,关键面积计算需要根据缺陷形状的不同选择适当的缺陷模型。针对化学机械研磨引入的划痕,提出了一种线性缺陷模型来计算其关键面积。在此基础上进一步考虑了线端效应的影响,对考虑划痕的关键面积计算模型提出了改进。实验结果表明改进后模型的计算结果更为准确。Critical area extraction is essential for accurate yield prediction.It is necessary to select the most appropriate defect model according to the defect shape in order to ensure the accuracy of critical area extraction.A linear defect model has been considered to model the scratch caused by CMP（chemical mechanical polishing） process.Combine this linear defect model and the influence of end effect,an improved scratch-concerned critical area extraction method is proposed.The experiment shows that the result from the improved method is more accurate.

关 键 词：化学机械研磨 划痕 线性缺陷模型 关键面积 成品率 

分 类 号：TN4[电子电信—微电子学与固体电子学]