物理气相传输法制备大面积AlN单晶  

Physical Vapor Transport Growth of Large Area AlN Single Crystal

作　　者：齐海涛[1] 洪颖[1] 王香泉[1] 王利杰[1] 张志欣[1] 郝建民[1] 

机构地区：[1]中国电子科技集团公司第四十六研究所,天津300220

出　　处：《硅酸盐学报》2013年第6期803-807,共5页Journal of The Chinese Ceramic Society

摘　　要：以自制[0001]正晶向SiC衬底为籽晶,采用物理气相传输法制备了直径42 mm、厚度700μm的AlN单晶层。介绍了晶体生长系统和生长工艺条件;分析了样品的相组成和形貌。结果表明:样品中SiC–AlN界面明晰,AlN单晶层透明、形貌平整,具有微台阶表面特征。Raman光谱和X射线衍射测试显示该层结晶性好,无杂质相,为典型的2H单晶晶型,生长面为标准的c面正晶向。A great AIN single crystal layer with the size of 42 mm in diameter and 700 μm in thickness was grown on SiC seed sub- strate by a physical vapor transport method. The crystal growth system and process condition were introduced. The phase constitutes and morphology of the sample grown was analyzed. The results show that the SiC-AIN interface in the crystal appears clear, and the A1N layer is translucent and planar with the microstep surface character. It is indicated that the A1N layer has a great crystallization degree and does not contain any impurity phases. The polytype of the grown A1N single crystal is a wurtzite-2H type structure and its growth surface is a perfect [0001] oriented c plane.

关 键 词：氮化铝单晶 物理气相传输法 碳化硅籽晶 

分 类 号：O782[理学—晶体学]