辐照偏置影响深亚微米MOS器件总剂量效应的理论研究  

Theoretical Study of Bias Effect on Total Ionizing Dose Irradiation of Ultra-deep Micron MOS Device

作　　者：丁李利[1,2] 郭红霞[2] 陈伟[2] 范如玉[1,2] 王忠明[2] 闫逸华[1,2] 陈雷[3] 孙华波[3] 

机构地区：[1]清华大学工程物理系,北京100084 [2]西北核技术研究所,陕西西安710024 [3]北京微电子技术研究所,北京100076

出　　处：《原子能科学技术》2013年第5期842-847,共6页Atomic Energy Science and Technology

基　　金：国家自然科学基金资助项目(10875096)

摘　　要：由理论公式推导出辐照偏压影响MOS器件总剂量效应宏观电学参数的解析表达,并给出器件仿真结果加以验证。在总剂量效应未达到饱和的情况下,截止态漏电流由辐照偏压和累积剂量的关系式唯一确定。引入等效累积剂量的概念,用于将MOS器件实际工作中的各类偏置映射为最劣偏置状况,进而利用实测数据求取对应的电学响应。所得单管解析表达式应用到电路仿真中能反映电路在不同偏置情况下的总剂量效应,可用于甄别电路的最劣辐照偏置状态。The bias effect on total ionizing dose irradiation of ultra-deep micron MOS device was studied in this paper,and an analytical model with corresponding electrical parameters was deduced.Before the total dose effect achieves saturation,the leakage current depends on the bias during irradiation and deposited dose through a specialized expression.The definition of effective deposited dose was introduced,which can be used to translate all kinds of irradiation bias exiting under real situation into the worst case and find electrical response of MOS device using experimental results.Introducing this model into circuit simulation,the total dose effects of circuits were got under different biases during irradiation and the worst case bias was identified.

关 键 词：辐照偏置 总剂量效应 MOS器件 解析模型 器件仿真 

分 类 号：TN386.1[电子电信—物理电子学]