同步辐射光刻均匀性最优控制  

Synchrotron radiation lithography uniformity optimum control

作　　者：郭从良[1] 刘同怀[1] 王荣生[1] 

机构地区：[1]中国科学技术大学电子科学与技术系,安徽合肥230026

出　　处：《核电子学与探测技术》2000年第1期37-39,共3页Nuclear Electronics & Detection Technology

摘　　要：在同步辐射光刻光束线和实验站上进行大规模集成电路光刻， 其均匀性问题直接影响暴光样品的成品率。利用计算机对暴光均匀性信号进行快速精细在线测量。讨论了光刻光束线在线实时控制系统和它的基本特征。Scanning mirror uniformity directly effects the exposure area of exposure samples in the chamber of soft X ray lithography beamline and station. Our main study is how to measure uniformity signal and how to transfer signal data into computer on line fast enough. It is not easy to find a good frequency to get exposure uniformity. In this paper we will discuss on line real control system of lithography beamline and it′s basic mathematic character. Some results and new ideas will be useful for industry and other applications.

关 键 词：光刻 均匀性 最优控制 同步辐射 集成电路 

分 类 号：TN405.7[电子电信—微电子学与固体电子学] TP273[自动化与计算机技术—检测技术与自动化装置]