硅基双层SIW结构毫米波MEMS滤波器  

Millimeter-Wave MEMS Filter with the Silicon-Based Double-Layer SIW Structure

作　　者：杨志[1] 杨拥军[2] 李倩[1] 胡小东[1] 徐永青[2] 

机构地区：[1]专用集成电路重点实验室,石家庄050051 [2]中国电子科技集团公司第十三研究所,石家庄050051

出　　处：《微纳电子技术》2013年第6期376-379,390,共5页Micronanoelectronic Technology

摘　　要：基于MEMS工艺设计并制作了一种小型化毫米波滤波器,该滤波器采用硅基双层SIW的结构形式。理论分析计算了滤波器的结构参数,并使用三维电磁场分析软件HFSS对该结构进行了模拟仿真。设计得到了中心频率f0为31.2 GHz、插入损耗为1.1 dB、1 dB带宽大于1 GHz、中心频率f0±3 GHz处抑制大于40 dB、芯片尺寸为4.6 mm×3.1 mm×0.8 mm的MEMS毫米波滤波器。给出了一套基于MEMS工艺的双层SIW结构毫米波MEMS滤波器的制作流程,实现了硅基双层SIW结构毫米波MEMS滤波器的工艺制作及测试。测试结果表明,获得的MEMS毫米波滤波器的测试结果与仿真结果基本一致。A miniaturized millimeter-wave filter with the silicon-based double-layer SIW silicon structure was designed and fabricated based on the MEMS technology. The structure parameters of the filter were analyzed and calculated theoretically, and the filter was simulated by 3D electro- magnetic field analysis software HFSS. The millimeter-wave MEMS filter with the double-layer SIW structure was designed with a center frequency f0 of 31.2 GHz, a in-band loss of 1.1 dB, a 1 dB bandwidth range of more than 1 GHz, a rejection at fo ＋ 3 GHz of above 40 dB and a chip size of 4.6 mm x 3.1 mm ~ 0.8 mm. The fabrication process of the double-layer SIW millimeter- wave MEMS filter was presented based on the MEMS technology. The fabrication and measure- ment of the silicon-based double-layer SIW millimeter-wave MEMS filter were achieved. The measurement results show that the measurement results is accordant with the simulation results.

关 键 词：微电子机械系统(MEMS) 滤波器 毫米波 双层 基片集成波导(SIW) 

分 类 号：TH703[机械工程—仪器科学与技术] TN713[机械工程—精密仪器及机械]