用于纳米器件的电子束与光学混合光刻技术  

Mixed E-Beam and Optical Lithography for Nanoscale Devices

作　　者：陈广璐[1] 唐波[1] 唐兆云[1] 李春龙[1] 孟令款[1] 贺晓彬[1] 李俊峰[1] 闫江[1] 

机构地区：[1]中国科学院微电子研究所集成电路先导工艺研发中心微电子器件与集成技术重点实验室,北京100029

出　　处：《微纳电子技术》2013年第6期386-390,共5页Micronanoelectronic Technology

基　　金：国家科技重大专项22 nm先导工艺项目(2009ZX02035-006);中国科学院微电子器件与集成技术重点实验室课题基金资助项目

摘　　要：成功开发出了一种可用于纳米结构及器件制作的电子束与光学光刻的混合光刻工艺。通过两步光刻工艺,在栅结构层上采用大小图形数据分离的方法,使用光学光刻形成大尺寸栅引出电极结构,利用电子束直写形成纳米尺寸栅结构,并通过图形转移工艺解决两次光刻定义的栅结构的叠加问题。此混合光刻工艺技术可以解决纳米电子束直写光刻技术效率较低的问题,同时避免了电子束进行大面积、高密度图形曝光时产生严重邻近效应影响的问题。这项工艺技术已经应用于先进MOS器件的研发,并且成功制备出具有良好电学特性、最小栅长为26 nm的器件。A mixed lithography process of the E beam and optical lithographies was developed successfully for the fabrication of the nanoscale structures and devices. At the gate structure level, the separation method of large and small pattern data was used, the large feature contact area patterns were defined by an optical lithography tool, and the nanoscale gate line patterns were achieved by the E-beam direct writing （EBDW） lithography. The two kinds of patterns were superposed using the pattern transfer process. This mixed lithography process could over- come the disadvantage of low throughput for the nanoscale E-beam direct writing lithography and avoid the severe proximity effect induced when the E-beam direct writing lithography is used to expose large area and high density patterns. The process was successfully employed to fabricate the MOS devices. The M（）S devices have excellent electrical properties, and the minimum gate length is 26 nm.

关 键 词：电子束光刻(EBL) 电子束直写(EBDW) 邻近效应 混合光刻 纳米器件 后栅工艺 

分 类 号：TN305.6[电子电信—物理电子学] TN305.7