BPSG膜双极晶体管的抗电离辐照性能研究  

Study on ionizing radiation effects of bipolar transistor with BPSG films

作　　者：吕曼[1] 张小玲[1] 张彦秀 谢雪松[1] 孙江超[1] 王鹏鹏[1] 吕长志[1] 

机构地区：[1]北京工业大学,北京100124 [2]北京燕东微电子有限公司,北京100015

出　　处：《核技术》2013年第6期19-23,共5页Nuclear Techniques

摘　　要：对SiO2+BPSG+SiO2钝化结构和SiO2+SiN钝化结构的双极晶体管和JW117集成稳压器进行了60Co的γ辐照和不同温度下退火行为研究。结果表明,覆盖BPSG钝化膜的器件抗辐照性能明显强于SiN钝化膜的器件。BPSG对Na+具有很好的吸收作用,SiO2层中的Na+很大部分被吸收到BPSG膜中,降低了双极晶体管基区的表面复合速率,减少过剩基极电流,这可能是BPSG钝化膜器件抗辐照性能好的主要原因。通过对器件辐照后不同温度下的退火实验,保证了BPSG钝化膜器件辐照后的工作可靠性。Background： Because of the damage induced by ionizing radiation, bipolar transistors in integrated voltage regulator could induce the current gain degradation and increase leakage current. This will bring serious problems to electronic system. Purpose： In order to ensure the reliability of the device work in the radiation environments, the device irradiation reinforcement technology is used. Methods： The characteristics of 6^Co yirradiation and annealing at different temperatures in bipolar transistors and voltage regulators （JW117） with different passive films for SiOz＋BPSG＋SiO2 and SiO2＋SiN have been investigated. Results： The devices with BPSG film enhanced radiation tolerance significantly. Because BPSG films have better absorption for Na＋ in SiO2 layer, the surface recombination rate of base region in a bipolar transistor and the excess base current have been reduced. It may be the main reason for BJT with BPSG film having a good radiation hardness. And annealing experiments at different temperatures after irradiation ensure the reliability of the devices with BPSG films. Conclusions： A method of improving the ionizing irradiation hardness of bipolar transistors is proposed. As well as the linear integrated circuits which containing bipolar transistors, an experimental basis for the anti-ionizing radiation effects of bipolar transistors is provided.

关 键 词：BPSG 钝化层 电离辐照 退火 

分 类 号：TL72[核科学技术—辐射防护及环境保护]