溅射功率对M型钡铁氧体薄膜磁性能的影响  

Effects of sputtering power on the magnetic properties of M-type barium ferrite films

作　　者：朱光伟[1] 余忠[1] 孙科[1] 许志勇[1] 张霞[1] 兰中文[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《磁性材料及器件》2013年第3期4-7,共4页Journal of Magnetic Materials and Devices

基　　金：国家自然科学基金资助项目(51101028);中央高校基金资助项目(E022050205)

摘　　要：采用射频磁控溅射法制备了c轴垂直膜面取向的M型钡铁氧体(BaM)薄膜,研究了溅射功率对BaM薄膜取向及磁性能的影响。结果表明,在溅射功率为80W、110W、140W和170W时所制备的BaM薄膜均具有一定程度的c轴垂直膜面取向,但溅射功率的增高会造成薄膜内晶粒取向混乱,导致薄膜磁晶各向异性降低;当溅射功率为140W时,薄膜具有最高饱和磁化强度(Ms)303kA/m和最小面外方向矫顽力(Hc⊥)191kA/m;适当低的溅射功率更有利于制得磁晶各向异性强的薄膜。RF magnetron sputtering method has been adopted to prepare M-type barium ferrite （BaM） films with c-axis orientation perpendicular to the film plane, and the effects of sputtering power on c-axis orientation and magnetic properties of BaM films were investigated. The results show that films deposited under sputtering power of 80W, 110W, 140W and 170W all possess a certain degree of c-axis orientation perpendicular to the film plane. Film deposited under sputtering power of 140W possesses the highest saturation magnetization （Ms） of 303kA/m and the lowest coercivity （He） of 191kA/m. The conclusion that a proper low sputtering power is more favorable to prepare BaM films with higher magnetocrystalline anisotropy has been deduced.

关 键 词：BaM薄膜 射频磁控溅射 溅射功率 C轴取向 磁性能 

分 类 号：TM277[一般工业技术—材料科学与工程]