放电气体对ECR-PECVD法制备微晶硅薄膜的影响  

Effect of Dilute Gas on Microcrystalline Si Films Deposited by ECR-PECVD

作　　者：程华[1,2] 钱永产[2] 薛军[2] 吴爱民[3] 石南林[1] 

机构地区：[1]中国科学院金属研究所 [2]中国人民解放军装甲兵技术学院 [3]大连理工大学

出　　处：《材料研究学报》2013年第3期307-311,共5页Chinese Journal of Materials Research

摘　　要：用电子回旋共振等离子体增强化学气相沉积(ECR-PECVD)法制备微晶硅薄膜,研究了放电气体对薄膜沉积速率、薄膜中H含量、择优取向和结晶度的影响。结果表明,以Ar作为放电气体时薄膜沉积速率比以H2作为放电气体时高1.5—2倍,但是薄膜的结晶度较低;以Ar作为放电气体时薄膜的H含量比以H2作为放电气体时的薄膜低;放电气体对薄膜的择优取向和晶粒度没有显著的影响。The microcrystalline silicon films were deposited by electron cyclotron resonance plasma-en- hanced chemical vapor deposition （ECR-PECVD） using SiH4/Ar and SiH4/H2 gaseous mixture. The effects of dilute gas on deposition rate, crystallinity, grain size and the configuration of H existing in microcrystal- line silicon films were investigated. The results show that the deposition rate of the film using Ar as dis- charge gas is 1.5-2 times higher than that using H2, but the film crystallinity is lower. At the same time, the concentration of hydrogen in the films deposited using SiH4/Ar is less than that of using SiH4/H2, but the preferred orientations and the grain sizes of the films are analogous.

关 键 词：材料合成与加工工艺 微晶硅薄膜 ECR-PECVD 放电气体 

分 类 号：O484[理学—固体物理]