背照射波长延伸InGaAs面阵焦平面探测器  

Back illuminated InGaAs detector arrays with extended-wavelength to 2.4 μm

作　　者：魏鹏[1,2] 黄松垒[1,2] 李雪[1,2] 邓洪海[1,2] 朱耀明[1,2] 张永刚[3] 龚海梅[1,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [3]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050

出　　处：《红外与毫米波学报》2013年第3期214-219,共6页Journal of Infrared and Millimeter Waves

基　　金：国家重点基础研究发展计划资助973项目(2012CB619200)~~

摘　　要：在MBE外延生长的In0.8Al0.2As/In0.8Ga0.2As材料上,采用台面成型方法制备了背照射32×32元InGaAs探测器,其中心距为30μm,并详细分析了探测器及其焦平面光电性能.结果表明,温度高于220 K时吸收层材料热激活能为0.443 eV,300 K时在所考虑的偏压范围内,暗电流主要由扩散电流、产生复合电流及其欧姆漏电流构成.对组件焦平面特性也进行了研究,并通过读出电路的变积分电容测试结构测试结果提取出积分电容上的寄生电容,在测试温度范围内约为10 fF左右.32 × 32 element mesa-type back-illuminated InGaAs detector arrays were fabricated on the MBE- grown In0.8 Al0.2As/In0.sG0.2As epitaxial materials by ICP etching. The characteristics of I-V curves, signal and noise were meas- ured and analyzed. The results indicated that the thermal activation energy is 0.443eV at 210 - 300 K. By fitting with experimental data, RoA and I-V at different temperature were calculated theoretically. Mechanism of dark current was an- alyzed and some methods of reducing dark current were put forward. The detector arrays were In-bonded to readout inte- grated circuits （ROICs） and the characteristics of the FPA was measured. The result of the tested structure with different integrate capacitance indicates that the parasitical capacitance is about 10fF.

关 键 词：INGAAS 暗电流 R0A 寄生电容 

分 类 号：TN215[电子电信—物理电子学]