铁掺杂对不同导电类型硅材料电阻率的影响  

Effects of iron-doping on resistivity of different Si materials

作　　者：周步康[1,2,3,4] 范艳伟[1,2,3] 陈朝阳[1,2,3] 

机构地区：[1]中国科学院新疆理化技术研究所,新疆乌鲁木齐830011 [2]新疆电子信息材料与器件重点实验室,新疆乌鲁木齐830011 [3]中国科学院特殊环境功能材料与器件重点实验室,新疆乌鲁木齐830011 [4]中国科学院大学,北京100049

出　　处：《电子元件与材料》2013年第7期10-13,共4页Electronic Components And Materials

基　　金：新疆维吾尔自治区自然科学基金资助项目(No.2010211B24);乌鲁木齐市科技项目资助(No.C101110001)

摘　　要：采用电阻率为4.8.cm的p型硅片和10.cm的n型硅片,通过高温扩散法制备出了Fe掺杂的补偿硅材料。在室温避光条件下,测量样品电阻率ρ,并用XRD对扩散后的样品进行分析,研究了Fe掺杂对不同导电类型硅材料电阻率的影响。结果表明:相对于n型硅材料,深能级杂质Fe掺杂对p型硅材料电阻率的影响更大,其Fe掺杂p型硅材料电阻率远大于Fe掺杂n型硅材料;当p型硅表面Fe扩散源浓度为1.74×10–5mol/cm2时,在1 200℃下扩散1 h后,材料具有最大电阻率7 246.cm。The iron doped compensation silicon materials were prepared by diffusing iron into p-type silicon of 4.8 Ω·cm and n-type silicon of 10Ω·cm using high temperature diffusion method. The resistivity of doped samples was measured at room temperature and photophobic condition. The samples were also analyzed using X-ray diffraction method. The effects of iron-doping on resistivity of different Si materials were studied. The results show that deep level impurity iron has greater influence on resistivity of p-type silicon than that of n-type silicon, the resitivity of iron-doped p-type silicon is much more than that of iron-doped n-type silicon, and the resistivity of the iron doped p-type silicon obtains the maximum value of 7 246Ω·cm when the doping process is carried out at 1 200 ℃ for 1 h with the surface density of the iron dopant source being 1.74× 10^-5 mol/cm^2.

关 键 词：P型硅 N型硅 深能级杂质 Fe 电阻率 补偿度 

分 类 号：TN304[电子电信—物理电子学]