宇航用SRAM存储器单粒子效应试验研究  

Study of Single Event Effects on SRAM Memory for Aerospace

作　　者：曹晖[1] 郑渊[1] 刘伟鑫[2] 吾勤之 

机构地区：[1]上海航天技术研究院,上海201109 [2]上海精密计量测试研究所,上海201109

出　　处：《上海航天》2013年第3期60-64,共5页Aerospace Shanghai

摘　　要：用高能重离子加速器对宇航用典型静态随机(SRAM)存储器进行了单粒子效应模拟试验研究。给出了测试系统、试验样品、辐射源、试验方法及条件,以及所得单位注量重离子引起的单粒子翻转发生次数-线性能量传输值(σ-LET)曲线。讨论了重离子单粒子翻转率预估方法和FOM法,并用后者预估了典型GEO轨道上器件的空间单粒子翻转率。The single event effect of typical aerospace SRAM memory was tested by high energy heavy ion accelerator in this paper. The experiment system, sample, radiation source, test method and condition were presented. The a-LET curves caused by the unit heavy ion were given out. The estimation method of the single upset rate and FOM method were discussed. The upset rate of SRAM memory in GEO orbits was calculated by FOM method.

关 键 词：SRAM存储器 单粒子效应 翻转率预估 

分 类 号：V520.6[航空宇航科学与技术—人机与环境工程]