平均空位径向扩散通量对直拉硅单晶空洞演化影响的相场模拟  

Phase-field Modeling of Void Dynamics during CZ Silicon Growth with Radial Vacancy Diffusion

作　　者：张向宇[1] 关小军[1] 曾庆凯[1] 潘忠奔[2] 张怀金[2] 王进[1] 

机构地区：[1]山东大学材料科学与工程学院,济南250061 [2]山东大学晶体研究所,济南250100

出　　处：《徐州工程学院学报（自然科学版）》2013年第2期41-45,共5页Journal of Xuzhou Institute of Technology(Natural Sciences Edition)

基　　金：高等学校博士学科点专项科研基金(200804220021)

摘　　要：直拉硅单晶中空洞的大小和数目对其性能有着至关重要的影响.采用已有的与晶体生长温度场有限元模型相耦合的空洞演化相场模型及其应用程序,模拟研究了不同的平均径向扩散通量对直拉单晶硅生长过程中空洞形貌及其分布状态演化的影响规律.结果表明:平均空位径向扩散通量的变化对于空洞演变阶段性及其形貌特征影响不大;随着平均空位径向扩散通量的增加,空洞的孕育阶段缩短,形核长大阶段延长,空洞平均尺寸及分数增加.The number and the size of voids have great influence on the quality of CZ silicon crystal. In this paper, an existing phase field model of void evolution which couples with the crystal growth tempera-ture field infinite element model is used to simulate and study influences of different radial diffusion fluxes on the shape and distribution of voids in the growth of CZ silicon crystal. The results show.the change in radial diffusion fluxes has little influence on the phases of void evolution and shapes of voids; with the in-crease of radial diffusion fluxes, the incubation stage will be shortened, the nucleation stage prolonged, the void fraction and diameters increased.

关 键 词：单晶硅 直拉法 空洞 空位径向扩散通量 相场模拟 

分 类 号：O78[理学—晶体学]