Effects of electrodes on resistance switching characteristics of TiO_2 for flexible memory  

作　　者：张楷亮 武长强 王芳 苗银萍 刘凯 赵金石 

机构地区：[1]Tianjin Key Laboratory of Film Electronic and Communication Device,School of Electronics Information Engineering,Tianjin University of Technology

出　　处：《Optoelectronics Letters》2013年第4期263-265,共3页光电子快报（英文版）

基　　金：the National Natural Science Foundation of China (Nos.61274113 and 11204212);the Program for New Century Excellent Talents in University (No.NCET-11-1064);the Tianjin Natural Science Foundation (Nos.13JCYBJC15700, 10SYSYJC27700 and 10ZCKFGX 01200);the Tianjin Science and Technology Developmental Funds of Universities and Colleges (No.20100703)

摘　　要：Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 103 times of substrate bend-ing, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V, respectively.Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal （MIM） structure is grown on polyimide （PI）. Several metals with different ductilities, such as Al, W, Cu and Ag, are selected as electrode. The test results show that the samples have stable resistive switching behaviors, and the electric characteristics can stay stable even after the radius of substrate is bent up to 10 mm. After 10^3 times of substrate bending, the memory cells with W as bottom electrode on PI still show stable resistive switching characteristics and low switching voltages. The set voltage and reset voltage can be as low as 0.9 V and 0.3 V. respectively.

关 键 词：TiO2电极 导通电阻 开关特性 存储器 塑料基板 设备制作 二氧化钛 聚酰亚胺 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]