PECVD分层结构对提高氢化非晶硅TFT迁移率的影响  

Improving the mobility of the amorphous silicon TFT with the new stratified structure by PECVD

作　　者：于遥[1] 张晶思 陈黛黛[1] 郭睿倩[1] 谷至华[1] 

机构地区：[1]复旦大学先进材料实验室 平板显示中心,上海200433 [2]中航技显示公司,上海201100

出　　处：《物理学报》2013年第13期525-531,共7页Acta Physica Sinica

摘　　要：为了进一步提高氢化非晶硅薄膜晶体管(a-Si:HTFT)的场效应电子迁移率,研究了批量生产条件下对欧姆接触层和栅极绝缘层进行多层制备,不同的工艺参数对a-Si:HTFT场效应电子迁移率的影响.研究表明随着对欧姆接触层(n+层)分层数的增加,以及低速生长的栅极绝缘层(GL层)和高速生长的栅极绝缘层(GH层)厚度比值提高,a-Si:HTFT的场效应迁移率得到提升.当n+层分层数达到3层,GL层和GH层厚度比值为4:11时,器件的场效应电子迁移率达到0.66cm2/V.s,比传统工艺提高了约一倍,显著改善了a-Si:HTFT的电学特性,并在量产线上得到了验证.The amorphous silicon TFT （a-Si thin film transistor） were fabricated in a new structure, in which the ohmic contact layer （n＋ layer） and the nitride silicon insulating layer for grid （G-SiNx） were stratified. Various factors which affect the electron mobility of a-Si TFT are studied using orthogonal test. With the increase in the number of n＋ layer, the electronic mobility also rises. Besides, G-SiNx should be stratified into a rapid deposition film （GH） and a low-speed growing film （GL）. The thickness of GL should be increased, with the thickness of GH reduced accordingly to achieve the electron mobility gradually increasing. Finally, based on the experimental results in the orthogonal combination experiments, the a-Si TFT mobility can stably reach 0.66 cm2/V.s, much higher than the traditional volume production data （0.29 cm2/V.s）.

关 键 词：非晶硅薄膜晶体管 电子迁移率 欧姆接触层 栅极绝缘层 

分 类 号：TN321.5[电子电信—物理电子学]