宽带隙n-型半导体CuIn_5Se_8的热电性能研究  

Thermoelectric Properties of n-Type Semiconductor CuIn_5Se_8 with Wide Band Gap

作　　者：周红[1] 应鹏展[1] 崔教林[2] 王晶[1] 高榆岚[1] 李亚鹏[3] 李奕沄 

机构地区：[1]中国矿业大学,江苏徐州221116 [2]宁波工程学院,浙江宁波315016 [3]太原理工大学,山西太原030024

出　　处：《稀有金属材料与工程》2013年第7期1474-1477,共4页Rare Metal Materials and Engineering

基　　金：国家自然科学基金(51171084;50871056);浙江省自然科学基金(Y4100182);宁波市自然科学基金(2011A610093)

摘　　要：利用放电等离子烧结技术制备了宽带隙三元半导体化合物CuIn5Se8,并对其热电性能进行了研究。物相分析表明,化合物为单相CuIn5Se8,带隙宽度为1.13eV,比In2Se3合金的低。电学性能测试结果表明,随温度升高Seebeck系数绝对值从370.0μV·K1降低到263.0μV·K1,而电导率则随温度迅速增大。在818K时,其电导率达到最大值2.921031·m1,热导率为0.50W·K1·m1,最高热电优值ZT值达到0.33。Wide-gap ternary semiconductor CuInsSe8 was prepared by the spark plasma sintering technique, and its thermoelectric properties were evaluated at 318-818 K. XRD analysis and band gap measurement indicate that this ternary compound is single phase CuInsSea with its band gap of 1.13 eV, about 0.2 eV smaller than that of In2Se3. The magnitude of Seebeck coefficient decreases from 370.0 to 263.0μV·k^（-1）, and electrical conductivity increases from 1,44×102 to 2.92×10^3Ω^（-1）·113^（-1） with the temperature increasing. The thermal conductivity is 0.50W·K^（-1）·m^（-1）, and the maximum thermoelectric figure of merit ZT is 0.33 at 818 K.

关 键 词：CuIn5Se8 宽带隙半导体 热电性能 

分 类 号：TN304[电子电信—物理电子学]