PECVD法制备氮化硅薄膜的电学性能研究  

The electrical property of SiNx films by PECVD

作　　者：凌绪玉[1] 

机构地区：[1]西南民族大学电气信息工程学院,四川成都610041

出　　处：《西南民族大学学报（自然科学版）》2013年第4期582-585,共4页Journal of Southwest Minzu University(Natural Science Edition)

摘　　要：以硅烷和氨气为前驱体,采用等离子增强化学气相沉积(PECVD)法制备了氮化硅(SiNx)薄膜.利用X射线光电子能谱和红外光谱,研究了在不同的硅烷/氨气流量比条件下,合成的氮化硅薄膜的组分和结构.结果表明:随着硅烷氨气流量比的增加,薄膜的氮硅原子比率增加;更多Si-N成键态随着NH3/SiH4流量比的增加获得.I-V曲线展现了氮化硅薄膜的电学性能.SiNx filrns are deposited by plasma-enhanced chemical vapor deposition with SiH4 and NH3 as precursors of different NH3 to SiH4 flow ratios. The surface composition and structure properties are detected by X-ray photoelectron spectroscopy （XPS） and Fourier transform infrared spectroscopy （FTIR） respectively. It shows that the N to Si ratios increases with the increasing of SiH4 to NH3 flow ratios, and consequently more Si-N bonding states are obtained. The electrical properties of prepared SiNx films are analyzed according to their I-V curve.

关 键 词：等离子增强化学气相沉积 氮化硅薄膜 电子材料 电学性能 

分 类 号：O484[理学—固体物理]