一种新的MOS结构量子化效应修正模型  

A New Correction Model for Quantum Mechanical Effects in MOS Structure

作　　者：马玉涛[1] 刘理天[1] 李志坚[1] 

机构地区：[1]清华大学微电子学研究所,北京100084

出　　处：《固体电子学研究与进展》2000年第3期237-243,共7页Research & Progress of SSE

摘　　要：从载流子在 MOS结构反型层内的经典分布和量子化后的子带结构出发 ,提出了经典的和量子化的表面有效态密度 (SL EDOS:Surface layer effective density- of- states)的概念。利用表面有效态密度的概念建立了经典理论框架和量子力学框架内的电荷分布模型。该模型包含了强反型区表面电势的变化对载流子浓度的影响 ,具有很高的计算效率和稳定性。在模型基础上 ,研究了量子化效应对反型层载流子浓度和表面电势的影响。Based on the analysis of the inversion layer carrier distribution in the space charge region in MOS structure,the concept of surface layer effective density of states(SLEDOS)is proposed.Then a new charge control model suitable for both semi classical and quantum mechanical theory is established in which the effects of inversion layer carrier distribution on surface potential are included.In this model,the effect of surface potential change after strong inversion on carrier sheet density is included and a new efficient iterative method is adopted.The model is of high efficiency and good stability.Based on the model,the effects of quantum mechanical effects (QMEs) on the strong inversion layer charge density and the surface potential are studied.

关 键 词：电荷分布模型 反型层电荷 量子化效应 MOS 

分 类 号：TN386.1[电子电信—物理电子学]