激光与砷注入碲镉汞的相互作用  

THE INTERACTION OF LASER AND ARSENIC IMPLANTED HgCdTe

作　　者：姜润清[1] 张燕[1] 孙渝明 

机构地区：[1]山东大学红外遥感研究室,山东济南250100

出　　处：《山东大学学报（自然科学版）》2000年第3期353-355,359,共4页Journal of Shandong University(Natural Science Edition)

基　　金：山东省杰出青年科学家奖励基金资助项目!( 980 2 )

摘　　要：利用YAG脉冲激光器 (脉宽为 1 0ns,波长为 1 .0 6μm )对砷注入长波碲镉汞样品进行激光退火 ,分析不同能量密度的激光光束退火所引起的样品表面电学性质的变化 .激光能量密度越大 ,激光退火的效果越明显 .要达到理想的退火效果 ,样品表面需处于熔化状态 ,重新组织晶格结构 .Arsenic implanted HgCdTe samples with long cutoff wavelength were annealed using the pulsed YAG laser irradiation method (pulse duration was 10ns, wave length was 1.06μm). Experiments had been done to analysis the changes of electrical properties of the samples that had been annealed by lasers of different energy density. We thought that the bigger the energy density is, the more the laser annealing could be gotten.

关 键 词：激光退火 砷注入 相互作用 碲镉汞化合物 半导体 

分 类 号：TN304.26[电子电信—物理电子学]