Ka波段InAlN/GaN/AlGaN双异质结场效应晶体管  

Ka Band InAlN/GaN/AlGaN Double-Heterostructure Field Effect Transistor

作　　者：张效玮[1,2] 贾科进[1] 房玉龙[2] 冯志红[2] 赵正平[1,2] 

机构地区：[1]河北工业大学信息工程学院,天津300130 [2]专用集成电路重点实验室,石家庄050051

出　　处：《半导体技术》2013年第8期589-592,608,共5页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60890192;60876009)

摘　　要：InAlN/GaN/AlGaN双异质结材料可以兼顾较高的二维电子气浓度和较好的载流子限域性,适宜制备Ka波段及以上微波功率器件。使用金属有机物气相外延方法,在SiC衬底上生长高性能InAlN/GaN/AlGaN双异质结构材料并制备了栅长为0.2μm的异质结场效应晶体管。测试结果表明,在栅压+2 V时器件的最大电流密度为1.12 A/mm,直流偏置条件VDS为+15 V和VGS为-1.6 V时,最高输出功率密度为2.1 W/mm,29 GHz下实现功率附加效率(ηPAE)为22.3%,截止频率fT达到60 GHz,最高振荡频率fmax为105 GHz。就功率密度和功率附加效率而言,是目前报道的Ka波段InAlN/GaN/AlGaN双异质结场效应晶体管研究的较好结果。InAlN/GaN/AlGaN double heterostructure material possesses the high two dimensional electron gas density and good carriers confinement, and is favorable for microwave power device of the Ka band and above applications. Using metal-organic chemical vapor deposition, the high performance Ka band InAlN/GaN/AIGaN double-heterostructure material and field effect transistor with a nominal gate length of 0. 2 I^m on SiC substrate were obtained. The test results show that the maximum drain current density is 1.12 A/ram at the gate voltage of ＋ 2 V. When DC bias conditions VDS is ＋ 15 V and Vcs is - 1.6 V, the maximum output power density is 2. 1 W/ram and the power added efficiency （~/eAr） is 22. 3% at 29 GHz. The cut-off frequency （fT） is 60 GHz, and the maximum oscillating frequency （f^Ax） is 105 GHz. The measurement results of the power density and power added efficiency are among the best reported on Ka band InAlN/GaN/AlGaN double heterostructure field effect transistor, and suggesting the good application prospect of the InAlN/GaN/AlGaN/double heterostrueture materials.

关 键 词：INALN GaN AlGaN双异质结 异质结场效应晶体管(HFET) 附加功率效率 碳 化硅(SiC) 功率增益截止频率 最高振荡频率 

分 类 号：TN304.26[电子电信—物理电子学] TN386