新型透明导电薄膜In_2O_3∶Mo  

Novel transparent conductive films In_2O_3∶Mo

作　　者：孟扬[1] 杨锡良[1] 陈华仙[1] 沈杰[1] 蒋益明[1] 章壮健[1] 华中一[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术》2000年第5期331-335,共5页Vacuum Science and Technology

摘　　要：MoO3的饱和蒸气压较高 ,可以直接用热反应蒸发法制备In2 O3∶Mo(IMO)透明导电薄膜。XPS和XRD测试结果证明 ,IMO薄膜中的Mo是以Mo6+ 离子形式取代了In2 O3 晶格中的In3+ 离子而存在的 ,没有形成新的化合物 ,也没有改变In2 O3 的体心立方晶格结构。在不进行退火、放电等工艺处理的情况下 ,用常规的反应蒸发法 ,在约 35 0℃ ,1 2mm厚的载玻片上制备的IMO薄膜在可见光区域的平均透射比 (含玻璃基底 )可超过 0 80 ,同时电阻率可以低至 1 7× 10 -4 Ωcm。A novel transparent conductive film,In 2O 3∶Mo(IMO) has been grown by conventional thermal reactive evaporation of MoO 3,which has a very high vapor pressure.The films were studied with X ray photo emission spectroscopy (XPS) and X ray diffraction (XRD).The XPS and XRD spectra reveal that the Mo 6+ ion replaces only the In 3+ ion in In 2O 3 instead of forming new compound in the IMO films and that the lattice structure of the IMO films is identical to the body centered cubic structure of the bulk In 2O 3.The electrical resistivity of the IMO films,grown by thermal reactive deposition at 350 ℃ on 1 2 mm thick glass substrates is as low as 1 7×10 -4 Ωcm and the average spectral transmittane of the films (including that of the glass substrate) can be over 0 80 in the visible region.

关 键 词：透明导电薄膜 掺钼氧化铟 反应蒸发 电导率 

分 类 号：O484.42[理学—固体物理]