集成稳压二极管的器件结构和工艺研究  

Research on Integrated Zener Diode Device Structure and Process

作　　者：潘光燃 王焜 

机构地区：[1]深圳方正微电子,广东深圳518116

出　　处：《电子与封装》2013年第7期28-31,共4页Electronics & Packaging

摘　　要：在集成电路中,稳压二极管的器件结构和工艺方法有很多种,它们的器件特性、工艺特征、工艺控制方法各不相同。文章对各种集成稳压二极管的结构和工艺方法分别进行了分析和研究,包括稳压二极管的反向击穿点、稳定电压的离散性和热稳定性、工艺集成的便捷性、关键工艺控制点等。通过这些研究,总结了这些稳压二极管的器件结构及其工艺方法各自的利弊,为工程人员设计、研究和开发集成有稳压二极管的技术平台提供了一些参考方向。In the integrated circuits,there are many types of zener diode device structure and process,their device characteristics,process characteristics,process control methods are different.These zener diode structure and process are analyzed and researched in this paper,including reverse breakdown point of zener diode,stability of Vz,ease of process integration,key process control and etc.By these studies,summarized the pros and cons of the zener diode structure and its process.For engineer in this field,when they design,research and develop the technology platform which integrated zener diode,this paper can provide some reference.

关 键 词：稳压二极管 稳定电压 反向击穿 工艺 

分 类 号：TN313.3[电子电信—物理电子学]