搭桥晶粒多晶硅薄膜晶体管  

Bridged-Grain Polycrystalline Silicon Thin-Film Transistors

作　　者：郭海成[1] 周玮[1] 陈荣盛[1] 赵淑云[1] 张猛[1] 王文[1] 陈树明 周南云 

机构地区：[1]香港科技大学显示技术研究中心 [2]广东中显科技有限公司,广东佛山528225

出　　处：《液晶与显示》2013年第4期471-478,共8页Chinese Journal of Liquid Crystals and Displays

基　　金：香港研究资助局主题研究计划项目(No.T23-713/11-1)

摘　　要：提出了一种薄膜晶体管的新结构。这种新结构充分发挥了短沟道效应和多结效应的优点。通过器件模拟,验证了此种器件结构的物理机制。通过应用这种新结构,薄膜晶体管的阈值电压、伪亚阈值斜率、开关电流比和场效应迁移率都大幅改善,并且器件的热载流子和自加热可靠性也得到了极大的改善。A new structure for thin-film transistors is proposed and demonstrated, exhibiting the benefits but not the drawbacks of both short-channel and multi-junction effects. Simula- tions are performed to verify the physics of this device structure. All characteristics such as threshold voltage, pseudo subthreshold slope, on-off current ratio and field-effect mobility are improved. Furthermore, device hot carrier and self-heating reliability are also improved by this new structure.

关 键 词：搭桥晶粒 多晶硅 薄膜晶体管 

分 类 号：TN321.5[电子电信—物理电子学]