AlGaAs/InGaAs PHEMT栅电流参数退化模型研究  

Gate current degradation model of the AlGaAs/InGaAs PHEMT

作　　者：万宁[1] 郭春生[1] 张燕峰[1] 熊聪[1] 马卫东[1] 石磊[1] 李睿[1] 冯士维[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《物理学报》2013年第15期389-394,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61204081);广东省重大科技专项项目(批准号:粤科规划字[2012]129)资助的课题~~

摘　　要：为定量研究在PHEMT栅电流退化过程中,不同失效机理对应的参数退化时间常数及退化比例,本文基于退化过程中物理化学反应中反应量浓度与反应速率的关系,建立了PHEMT栅电流参数退化模型.利用在线实验的方法获得PHEMT电学参数的退化规律,分析参数随时间的退化规律,得到不同时间段内影响栅电流退化的失效机理,并基于栅电流参数退化模型,得到了不同的失效机理对应的参数退化时间常数及退化比例.For quantitative study of time constant and degradation ratio of degradation parameters which correspond to different failure mechanisms in pseudomorphic high electron mobility transistor （PHEMT） gate current degradation process, a PHEMT gate current degradation model is established based on the relationship between reaction volume concentration and reaction rate in the process of degradation. The degradation law of PHEMT electrical parameters is obtained using online experiment method. The parameter degradation law with the time is analyzed and the failure mechanism which affects gate current degradation in different time period is obtained. Meanwhile, based on the gate current parameter degradation model, time constant and degradation ratio of degradation parameters, which correspond to different failure mechanisms, are also obtained.

关 键 词：PHEMT 栅电流 肖特基接触 退化模型 

分 类 号：TN32[电子电信—物理电子学]