磁场下有限厚势垒GaAs/Al_xGa_(1-x)As量子阱中杂质态结合能  

Binding Energies of Impurity States in GaAs/Al_xGa_(1-x)As Quantum Wells with Finite Thick Potential Barriers under Magnetic Fields

作　　者：张雪枫[1] 班士良[1] 

机构地区：[1]内蒙古大学物理科学与技术学院,呼和浩特010021

出　　处：《内蒙古大学学报（自然科学版）》2013年第4期376-381,共6页Journal of Inner Mongolia University：Natural Science Edition

基　　金：国家自然科学基金资助项目(No.61274098)

摘　　要：利用变分法讨论势垒厚度对GaAs/AlxGa1-xAs量子阱中杂质态结合能的作用以及垂直于界面方向磁场的影响,分别给出结合能随阱宽、垒厚、杂质位置和磁场强度的变化关系,并与无限深势阱量子阱和无限厚势垒量子阱两种情形的结果进行了比较.结果表明,在小阱宽下,有限高势垒时的结合能明显小于无限高势垒情形,有限厚势垒时的结合能大于无限厚势垒情形.随着阱宽增加,三种情形下结合能的差异逐渐减小.磁场的约束显著地影响着杂质态结合能,其值随着外磁场的增大而单调增加.在以后的工作中,应考虑本文对势垒的修正.A variational method is used to investigate the effect of barriers on binding energies of impurity states in GaAs/AlxGa1-xAs quantum wells and the influence from a magnetic field perpendicular to the interfaces.The relations between binding energies and well widths,barrier thickness,impurity positions and magnetic fields are given respectively.And a comparison with that of quantum wells with infinite high barriers and infinite thick barriers is given.The results indicate that the binding energy for a quantum well with finite high barriers is obviously less than that with infinite high barriers,and the binding energy for a quantum well with finite thick barriers is bigger than that with infinite thick barriers for a small well width.The difference among the three cases becomes small as the well width increases.The binding energies are influenced strongly by the confinement of a magnetic field,and increase as the strength of a magnetic field increases.The modification on the barriers should be considered in future works.

关 键 词：有限厚势垒 GAAS AlxGa1-xAs量子阱 杂质态结合能 磁场 

分 类 号：O471.3[理学—半导体物理]