用硅压阻应力传感器研究倒装芯片封装应力  

Research on Stress in Flip Chip Packaging with Silicon Piezoresistive Stress Sensor

作　　者：蒋程捷[1] 豆传国 杨恒 肖斐[1] 

机构地区：[1]复旦大学材料科学系,上海200433 [2]上海微系统与信息技术研究所,上海200233

出　　处：《半导体技术》2013年第7期545-550,共6页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2009ZX02038)

摘　　要：电子封装是集成电路产品制造过程中的重要环节,而电子封装所产生的应力则可能会对芯片的性能及可靠性产生影响,因而受到业界的广泛关注。利用半导体压阻效应制造硅压阻应力传感器阵列芯片,将其倒装键合至印刷电路板,填充不同类型的下填料进行固化。通过测量应力传感器芯片上的力敏电阻变化,计算倒装键合和下填料固化等封装工艺引入的应力,并讨论了下填料的性能参数对芯片应力大小的影响。此外,在标定力敏电阻及压阻系数温度效应的基础上,对下填料固化过程的应力变化进行了实时监测,分析了下填料固化工艺引起的应力。Electronic packaging is an essential process in IC industry, and the stress generated in the packaging process attracts wide attention because of its impact on the performance and reliability of the chips. Silicon piezoresistive stress sensor array chips based on the piezoresistance effect were fabricated. The sensor chips were flip-chip bonded to printed circuit board （PCB） and filled with various kinds of underfills. The stress induced by the flip-chip bonding and underfill curing process was studied by measuring the change of piezoresistors, and the influence of underfill properties on the stress in flip- chip bonded chips was discussed. The temperature effects of piezoresistors and piezoresistance coefficients were calibrated. The stress variation during underfill curing process was monitored and analyzed.

关 键 词：应力传感器 压阻效应 倒装芯片 下填料 温度效应 

分 类 号：TN407[电子电信—微电子学与固体电子学]