磁场应用在硅晶体生长过程中的研究进展  

Research and Development on Magnetic Field Application in the Process of Silicon Crystal Growth

作　　者：张发云[1,2] 罗玉峰[1,2] 李云明[1,2] 王发辉[1,2] 胡云[1,2] 彭华厦[2] 

机构地区：[1]新余学院新能源科学与工程学院,新余338004 [2]新余学院江西省高等学校硅材料重点实验室,新余338004

出　　处：《材料导报》2013年第13期15-19,共5页Materials Reports

基　　金：国家自然科学基金(51164033);江西省自然科学基金(20132BAB206021);江西省教育厅科学技术研究项目(11739;12748);校级招标课题(xj0901)

摘　　要：论述了磁场技术应用于硅晶体生长中的基本概况,探讨了磁场影响硅晶体生长的机制,重点阐述了各种磁场的分类、基本原理及其在硅晶体生长的应用,并归纳总结了国内外磁场应用于硅晶体生长中的研究现状。另外,对硅晶体生长中杂质的分凝行为和数值模拟作了简要介绍,并展望了磁场应用于硅晶体生长的发展前景。The research history of magnetic field technology used for the growth of silicon crystal are summa- rized. The impact mechanism of magnetic field on crystal growth is introduced. Classification, basic principle of a va- riety of magnetic fields and its application in silicon crystal growth are emphatically described, and present research of magnetic field application in silicon crystal growth in China and other countries are concluded. In addition, the segre- gation behavior of the impurity during the growth of silicon crystal and numerical simulation about the growth of sili- con crystal are simply studied, and the possible future development for the growth of silicon crystal with magnetic field technology is reviewed in detail.

关 键 词：多晶硅 磁场 杂质 分凝行为 数值模拟 

分 类 号：TM914.4[电气工程—电力电子与电力传动]