硅表面抗反射纳米周期阵列结构的纳米压印制备与性能研究  

The fabrication of the antireflective periodic nano-arrary structure on Si surface using nanoimprint lithography and the study on its properties

作　　者：张铮[1] 徐智谋[1] 孙堂友[1] 何健[1] 徐海峰[1] 张学明[1] 刘世元[2] 

机构地区：[1]华中科技大学光学与电子信息学院,武汉430074 [2]华中科技大学,数字制造装备与技术国家重点实验室,武汉430074

出　　处：《物理学报》2013年第16期416-422,共7页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61076042;60607006);国家重大科学仪器设备开发专项(批准号:2011YQ16000205);国家高技术研究发展计划(批准号:2011AA03A106)资助的课题~~

摘　　要：硅表面固有的菲涅耳反射,使得硅基半导体光电器件(如太阳能电池、红外探测器)表面有30%以上的入射光因反射而损失掉,严重影响着器件的光电转换效率.寻找一种方法降低硅基表面的反射率,进而提高器件的效率成为近年来研究的重点.本文基于纳米压印光刻技术,在2英寸单晶硅表面制备出周期530nm,高240nm的二维六角截顶抛面纳米柱阵列结构.反射率的测试表明,当入射光角度为8°时,有纳米结构的硅片相对于无纳米结构的硅片来讲,在400到2500nm波长范围内的反射率有很明显的降低,其中,800到2000nm波段的反射率都小于10%,在波长1360nm附近的反射率由31%降低为零.结合等效介质理论和严格耦合波理论对结果进行了分析和验证.The intrinsic Fresnel reflection of Si surface, which causes more than 30% of the incident light to be reflected back trom the surface, seriously influences the photoelectric conversion efficiency of Si-based semiconductor photoelectric device, such as solar cell and infrared detector. Recently, how to find a simple and efficient method, which is also suitable for mass production, aiming to suppress the undesired reflectivity and therefore improving the efficiency of the device, has become a research focus. In this work, we successfully convert a 2D nanopillar array structure into the Si surface via the nanoimprint lithography. The nanopillar has a flat surface and a paraboloid-like side wall profile. The period and the height of the hexagonal array structure are 530 nm and 240 nm, respectively. The cut-paraboloid nanopillar structure generates a relatively smooth gradient of the refractive index in the optical interface, which plays a key role in suppressing the Fresnel reflection in a wide range of wavelength. The reflectivity of the nanopillar arrayed Si surface is tested in a wavelength range from 400 to 2500 nm at an incident angle of 8° during the measurement. Compared with the unstructured Si, the structured Si has a reflectivity that significantly decreases in the test area： in a wavelength range from 400 to 1200 nm, and the reflectivity of the silicon surface is less than 10%. Specifically, the reflectivity is almost zero at a wavelength of about 1360 rim. The results are confirmed with the effective medium and rigorous coupled-wave theory.

关 键 词：纳米压印 截顶抛物面阵列 抗反射 等效介质理论 

分 类 号：TN305[电子电信—物理电子学]