溅射功率对Mg_(0.2)Zn_(0.8)O∶Al紫外透明导电薄膜结构与性能的影响  

EFFECTS OF SPUTTERING POWER ON MICROSTRUCTURE AND PROPERTIES OF Mg_(0. 2)Zn_(0. 8)O∶ Al UV-TRANSPARENT CONDUCTING THIN FILMS

作　　者：王华[1] 燕红[2] 黄竹[1] 许积文[1] 杨玲[1] 

机构地区：[1]桂林电子科技大学信息材料广西重点实验室,桂林541004 [2]郑州铁路职业技术学院公共教学部,郑州450052

出　　处：《太阳能学报》2013年第8期1317-1322,共6页Acta Energiae Solaris Sinica

基　　金：广西教育厅科研项目(200734);广西信息材料重点实验室主任基金(0710908-05-Z)

摘　　要：以自制Mg0.2Zn0.8O∶Al陶瓷为靶材,采用磁控溅射工艺室温条件下在石英玻璃衬底上制备Mg0.2Zn0.8O∶Al紫外透明导电薄膜。研究溅射功率对Mg0.2Zn0.8O∶Al薄膜结构和光电性能的影响。测试结果表明:溅射功率不会明显影响薄膜中的成分及其浓度,并与靶材基本吻合;不同溅射功率下Mg0.2Zn0.8O∶Al薄膜均具有非常好的c轴择优取向生长特性,透光区域均扩展到紫外区域,而且随溅射功率从100W增大到200W,薄膜的晶粒有所增大,结晶程度明显提高,电阻率从50Ω·cm降低到不足1Ω·cm,透光率无明显差别,约为89%,带隙宽度略有减小,光吸收边略向长波方向移动,但溅射功率达到250W以后,薄膜质量有所下降,粗糙度增大,电阻率略有回升,透光率有所降低。Mg0.2Zn0.8O：A1 UV-transparent conducting thin films were prepared on quartz glass by radio frequency magnetron sputtering at room temperature. The effects of sputtering power on microstructure and photoelectric properties ofMg0.2Zn0.8O：A1 films were investigated. The experimental results show that the Mg/A1/Zn atomic ratio in films is accordant to the doping level in theMg0.2Zn0.8O：A1 ceramic targets, Mg0.2Zn0.8O：A1 thin films exhibit high preferred c-axis-orientation and high transmittance in UV region. With the increase of sputtering power from 100W to 200W, the grain size increase slightly, the resistivity of Mg0.2Zn0.8O：A1 decrease rapidly from to less cm, the band gap decrease appreciably with a transparency of about 89%. However, the resistivity ofMg0.2Zn0.8O：A1 thin films increase and the transparency decrease slightly when the sputtering power is over 250W.

关 键 词：紫外透明导电薄膜Mg0 2Zn0 8O A1磁控溅射 溅射功率 光电性能 

分 类 号：O484[理学—固体物理]