CMP后清洗技术发展历程  

The Development History of the Post CMP Cleaning Technology

作　　者：周国安[1] 徐存良[1] 

机构地区：[1]中国电子科技集团公司第四十五研究所,北京101601

出　　处：《电子工业专用设备》2013年第8期9-12,44,共5页Equipment for Electronic Products Manufacturing

摘　　要：从80年代开始,结合当时最具代表性的CMP设备,分析当时的后清洗技术,如:多槽浸泡式化学湿法清洗、在线清洗、200 mm集成清洗、300 mm集成清洗及20 nm以下的CMP后清洗趋势,每种后清洗技术都结合CMP设备明确分析其技术特色,优点和缺陷。全面阐述CMP工业界的后清洗发展历程。The paper analyses the post CMP technology combing with the typical CMP equipment t^om1980s. Such as： Multiple tanks immerse wet chemical cleaning,in-line cleaning,200mm integrated cleaning, 300ram integrated cleaning and the cleaning trend sub the 20nm technology node. Each post CMP cleaning technology combing with the CMP equipment, analyzing its special, advantage and shortage. The paper analyses the industry post CMP cleaning from all aspect.

关 键 词：化学机械平坦化 后清洗 RCA湿法清洗 在线清洗 集成清洗 

分 类 号：TN305.97[电子电信—物理电子学]