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作 者:陈景升[1] 俞国庆[1] 潘浩昌[1] 朱德彰[1] 徐洪杰[1] 郑志豪[2] 阎逢元[3]
机构地区:[1]中国科学院上海原子核研究所核分析技术开放实验室,上海201800 [2]华东师范大学,上海200062 [3]中国科学院兰州化学物理研究所固体润滑国家开放实验室,兰州730000
出 处:《核技术》2000年第9期593-598,共6页Nuclear Techniques
基 金:国家自然科学基金!(19735004);中国科学院基金!(KT952-J1-414)
摘 要:在室温下,以硅(100)为衬底,在不同的衬底偏压(即团簇不同碰撞能量)的条件下,用荷能团簇碰撞沉积方法制备了TiN薄膜。用原子力显微镜和X射线衍射等技术对TiN薄膜的表面形貌和结构进行了研究,并且在维式硬度计和SRV微动摩擦磨损试验机上对其摩擦学性能进行了考察。结果表明,在低的偏压情况下,团簇比较松散地堆积在衬底上;而在高偏压时团簇和衬底碰撞破碎,形成附着力强、致密性好及表面非常光滑的薄膜;在一定的偏压范围内,TiN薄膜是(220)择优取向,TiN薄膜具有较高的硬度、较低的摩擦系数和较好的耐磨损性能。Titanium nitride films were deposited on silicon(100) substrate at room temperature with various substrate bias voltages (corresponding to various impact energy) by energetic cluster impact (ECI). Atomic force microscope (AFM) and X-ray diffraction(XRD) were employed to characterize the morphology and structure of TiN films, respectively. The tribological properties of TiN films were investigated by a Vicker microhardness tester and SRV fretting wear tester. The results showed that the clusters were gently stocked one above the other in low bias voltage; the clusters broke apart and films with superior density, adhesion and smoothness were formed at high bias voltage. The films formed within certain range of bias, have (220) preferred orientation and possess high microhardness, low friction coefficient and good anti-wear property.
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