Carrier Depth Profile of Si/SiGe/Si n-p-n HBTStructural Materials Characterized by Electrochemical Capacitance- Voltage Method  

作　　者：林燕霞 黄大定 张秀兰 刘金平 李建平 高飞 孙殿照 曾一平 孔梅影 

出　　处：《Journal of Semiconductors》2000年第11期1050-1054,共5页半导体学报（英文版）

摘　　要：Si/SiGe/Si n\|p\|n HBT structural materials have been grown by gas source molecular beam epitaxy with disilane, solid Ge, diborane and phosphine as sources. The materials are of good structural properties. The effectiveness of Electrochemical Capacitance\|Voltage (ECV) technique on profiling the shallow doped layers of nanometer dimensions has been demonstrated. Compared with spreading resistance probe, the ECV technique is relatively easy to get the carrier distribution profile, especially for the Si/SiGe/Si HBT structural materials with shallow (≤50nm) base regions (p\|type SiGe layer, Ge content about 0.2). The results show that n\|p\|n structures can be obtained by in situ doping.Si/SiGe/Si n\|p\|n HBT structural materials have been grown by gas source molecular beam epitaxy with disilane, solid Ge, diborane and phosphine as sources. The materials are of good structural properties. The effectiveness of Electrochemical Capacitance\|Voltage (ECV) technique on profiling the shallow doped layers of nanometer dimensions has been demonstrated. Compared with spreading resistance probe, the ECV technique is relatively easy to get the carrier distribution profile, especially for the Si/SiGe/Si HBT structural materials with shallow (≤50nm) base regions (p\|type SiGe layer, Ge content about 0.2). The results show that n\|p\|n structures can be obtained by in situ doping.

关 键 词：GSMBE ECV 锗化硅 结构材料 HBJ 

分 类 号：TN32[电子电信—物理电子学]