ICP刻蚀InGaAs的微观损伤机制研究  

Microcosmic damage mechanism of inductively couple plasma etching for InGaAs

作　　者：程吉凤[1,2] 朱耀明[1,2] 唐恒敬[1,2] 李雪[1,2] 邵秀梅[1,2] 李淘[1,2] 

机构地区：[1]中国科学院上海技术物理研究所传感技术国家重点实验室,上海200083 [2]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083

出　　处：《红外与激光工程》2013年第8期2186-2189,共4页Infrared and Laser Engineering

基　　金：国家自然科学基金(61007067)

摘　　要：为获得低损伤、稳定性好的感应耦合等离子体(ICP)刻蚀InGaAs探测器台面成型工艺,采用Raman光谱技术和X射线衍射(XRD)技术,初步研究了Cl2/N2气氛刻蚀InGaAs的主要损伤机制,确定以晶格缺陷损伤为主;并采用微波反射光电导衰退(μ-PCD)法对不同处理工艺下表面的缺陷损伤进行了表征和分析,结果表明刻蚀表面湿法腐蚀和硫化的方法可在一定程度上减小表面的缺陷损伤和断键,但是存在一些深层次的缺陷。In order to obtain a method for low damage and steaty mesa structures, the damage mechanism of InGaAs by C12/N2 ICP etching was studied in this paper. The surfaces of InGaAs before and after etching was investigated using Raman spectroscopy and X-ray diffraction （XRD） technology. The results indicate that lattice defects are the main damages. The surface damage of different treatment process was characterised and analysed by the method of microwave photoconductivity decay measurement. The results show that the surface defects and broken bonds of etching damage are decreased to a certain extent by wet etching and surface sulfur treatment, but deep defects still cannot be avoided.

关 键 词：感应耦合等离子体 铟镓砷 RAMAN光谱 XRD 刻蚀损伤 

分 类 号：TN215[电子电信—物理电子学]