选择性刻蚀碳化硅制备金刚石的研究  

Preparation of Silicon Carbide Derived Diamond by Selective Etching

作　　者：王正鑫[1,2] 卢文壮[1,2] 黄群超[1] 王晗[1] 胥军[1] 左敦稳[1] 

机构地区：[1]南京航空航天大学机电学院,南京210016 [2]江苏省精密与微细制造技术重点实验室,南京210016

出　　处：《人工晶体学报》2013年第8期1537-1542,共6页Journal of Synthetic Crystals

基　　金：国家自然科学基金(51075211;51275230);教育部博士点基金项目(20113218110018);江苏省高校优势学科建设工程资助项目

摘　　要：在高温下Cl2+H2体系可促使SiC转化为金刚石。论文从热力学角度分析了Cl2选择性刻蚀SiC制备金刚石时,Cl2和H2对sp2、sp3杂化形式的C-C键的作用机制,从理论上推导了SiC转化为金刚石的气源中Cl2、H2比例范围。建立了SiC结构向金刚石结构转变时形成金刚石团簇的理论模型,根据该模型解释了SCDD膜的增厚机制。The gas mixture with chlorine and hydrogen can lead to a conversion of silicon carbide to diamond at high temperature. The effect of the chlorine and hydrogen on spE-bonded and sp3-bonded carbon in silicon carbide derived diamond process was discussed by thermodynamics. The ratio of C12/H2 in the reaction gas was determined. A theoretical transformation model describing SiC structure to diamond structure was established to explain the thickening mechanism of SCDD coatings.

关 键 词：金刚石 碳化硅 氯气 热力学 选择性刻蚀 

分 类 号：TQ164[化学工程—高温制品工业]