16～22nm极紫外光刻物镜工程化设计  

Manufacturable Design of 16～22nm Extreme Ultraviolet Lithographic Objective

作　　者：曹振[1] 李艳秋[1] 刘菲[1] 

机构地区：[1]北京理工大学光电学院光电成像技术与系统教育部重点实验室,北京100081

出　　处：《光学学报》2013年第9期249-256,共8页Acta Optica Sinica

基　　金：国家科技重大专项(2012ZX02702001-002)

摘　　要：极紫外光刻是16～22nm光刻技术节点的候选技术之一,其投影物镜设计需在满足像质和分辨率要求的前提下,兼顾工程可实现性。在考虑加工、检测和制造约束的情况下,设计了像方数值孔径分别为0.3和0.32、曝光视场为26mm×1.5mm的极紫外光刻投影物镜。详细分析和比较了两套物镜的光学性能和可制造性。结果表明,两套物镜结合分辨率增强技术可分别满足22nm和16nm光刻技术节点的性能要求。Extreme ultraviolet lithography is one of the promising technologies for 16～22 nm node of lithography. Design of the extreme ultraviolet lithographic projection objective needs not only to meet the demand of imaging quality and resolution but also to consider the manufacturability. Two projection objectives with numerical apertures of 0.3 and 0. 32, respectively, are designed in the 26 mm × 1. 5 mm exposure area to meet the demands of manufacture, measurement and fabrication. The optical performance and manufacturability of the two projection objectives are analyzed and compared in detail. Combining with the resolution enhancement technology, the two projection objectives can meet the requirements of 22 nm and 16 nm node of lithography.

关 键 词：光学设计 投影物镜 反射系统 极紫外光刻 

分 类 号：TN305.7[电子电信—物理电子学]