三维H形栅SOINMOS器件总剂量条件下的单粒子效应  

Single event effect of 3D H-gate SOI NMOS devices in total dose ionizing

作　　者：卓青青[1] 刘红侠[1] 王志[1] 

机构地区：[1]西安电子科技大学微电子学院,宽禁带半导体材料与器件教育部重点实验室,西安710071

出　　处：《物理学报》2013年第17期380-385,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:61076097,60936005);中央高校基本科研业务费专项资金(批准号:200110203110012)资助的课题~~

摘　　要：本文通过数值模拟研究了H形栅SOI NMOS器件在总剂量条件下的单粒子效应.首先通过分析仿真程序中影响迁移率的物理模型,发现通过修改了的由于表面散射造成迁移率退化的Lombardi模型,仿真的SOI晶体管转移特性和实测数据非常符合.然后使用该模型,仿真研究了处于截止态(VD=5 V)的H形栅SOI NMOS器件在总剂量条件下的单粒子效应.结果表明:随着总剂量水平的增加,器件在同等条件的重离子注入下,产生的最大漏极电流脉冲只是稍有增大,但是漏极收集电荷随总剂量水平大幅增加.The single event effect of H-gate SOI NMOS devices in total dose ionizing are studied by means of numerical simulation. By analyzing the mobility degradation in the simulation process, the corrected mobility Lombardi model due to degradation at interfaces is obtained. As the simulated transfer characteristic curves of SOI transistor agree well with the experimental data, the single event effect of H-gate SO1 NMOS devices in total dose ionizing is simulated by this corrected model. Results shows that the maximum drain currents of devices under the same conditions are slight increasing, but the transistors get a significant increase in the drain collected charge with increasing total dose level.

关 键 词：单粒子脉冲电流 漏极收集电荷 总剂量效应 

分 类 号：TN386[电子电信—物理电子学]