i-GaAlAs/GaAs异质结绝缘栅场效应晶体管的静态特性研究  

ANALYTICAL RESEARCH ON THE STATIC CHARACTERISTICS OF HETEROSTRUCTURE INSULATED GA TE FIELDEFFECT TRANSISTORS

作　　者：王德宁[1] 顾聪[1] 王渭源[1] 

机构地区：[1]中国科学院上海冶金研究所

出　　处：《电子科学学刊》1991年第3期286-292,共7页

基　　金：国家自然科学基金资助课题

摘　　要：本文在改进型电荷控制模型基础上,引进GSW速度场方程,推导出异质结绝缘栅场效应晶体管(HIGFETs)的I_D-V_D-V_G,I_(DS)-V_G,G_m,和C_G等一系列静态特性方程。计算结果与文献实测值进行了比较,在V_G<2V,I_D<I_(DS)时两者符合得甚好。本文讨论了温度对V_(ik)的影响;器件的结构参数:栅长L、栅宽W,源电阻R_S,GaAlAs厚度d,GaAs迁移率和温度对G_m的影响。并指出了提高HIGFETs性能的可能途径。Based on improved charge conttrol model and combining GSW velocity-field equation, a series of analytical solutions for the static characteristics of HIGFETs such as TD-VD-VG,Gm and CG are derivel. The results of calculations are compared with experimen-tal data reported in references, within the rang of VG<2V, ID < TDS, they agree very well. It is pionted out that two-lengrh model must be considered in the high field region due to gre-ater leakage current between the gate and rhe drain. The effects of temperature on Vtk, and the effects of gate length and width, temperature, GaAlAs thickness, source resistance, GaAs mobility on Gm are discussed. Possible approaches for improving performances of HIGFETs are pointed out according to the above analyses.

关 键 词：异质结 场效应晶体管 绝缘 

分 类 号：TN386.2[电子电信—物理电子学]