一种弱光成像用AlGaN APD阵列的读出电路设计  

Readout IC for Low-level Light Imaging AlGaN APD Arrays

作　　者：邓光平[1] 刘昌举[1] 祝晓笑[1] 熊平[1] 吴治军[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2013年第4期569-572,575,共5页Semiconductor Optoelectronics

摘　　要：设计了64×64 AlGaN雪崩光电二极管(APD)阵列的读出电路,该读出电路采用了具有稳定探测器偏压能力的电容跨阻抗放大器(CTIA)结构。利用APD的等效电路模型,推导了电荷-电压转换因子(CVF)与积分电容、放大器增益的关系。为增加最大探测光电流、降低响应的非均匀性,利用上述关系得到积分电容为70fF,放大器增益为300。读出电路的地址选择采用移位寄存器来实现,并采用电压缓冲器实现信号的输出。A readout integrated circuit （ROIC） coupled into 64X 64 A1GaN APD array was designed. The unit-cell input stage is implemented with capacitor transimpedance amplifier （CTIA） which could stabilize the detectors＇ bias voltage. Using the equivalent circuit of APD, the relationship of charge to voltage conversion factor （CVF） with the integration capacitance and the gain of amplifier is presented. To increase the maximum detectable photocurrent and reduce the response non-uniformity, the integration and 300, respectively. The address selection voltage buffer, respectively. capacitance and the gain of amplifier are set as 70 fF and signal output are realized by shift-registers and

关 键 词：读出电路 雪崩光电二极管 CTIA 电荷-电压转换因子 

分 类 号：TN36[电子电信—物理电子学]