表面光电压法研究氧化工艺铁离子沾污  

Investigation on Fe Contamination in Oxidation Process by Surface Photovoltage Technique

作　　者：廖乃镘[1] 林海青[1] 向华兵[1] 李贝[1] 李仁豪[1] 

机构地区：[1]重庆光电技术研究所,重庆400060

出　　处：《半导体光电》2013年第4期600-602,606,共4页Semiconductor Optoelectronics

摘　　要：表面光电压法(SPV)能精确测量硅片的Fe离子浓度,是一种快速、非破坏性的高灵敏度测试方法。采用表面光电压技术研究了氧化工艺中的Fe离子沾污。研究表明,氧气、氮气、三氯乙烯中含有的微量杂质是氧化工艺中Fe离子沾污的主要来源。通过对氧气、氮气进行进一步纯化处理、减少三氯乙烯杂质质量分数到1.0×10-8、更换传输气体的不锈钢管路等措施,将氧化工艺Fe离子沾污减少了一个数量级。The Fe content in the silicon wafer can be accurately determined by surface photovoltage （SPV） technique which is a rapid and nondestructive measure with high sensitivity. In this study, the Fe contamination in the oxide process was investigated by means of SPV technique. The results show that trace impurity contained in the oxygen, nitrogen and trichloroethylene mainly lead to the Fe contamination in the oxidation process. Through purifying oxygen and nitrogen, reducing the content of trace metal in the trichloroethylene from 1.0 × 10-7 to 1.0×10-8 and renewing the stainless steel pipeline for transmitting oxygen and nitrogen, the Fe contamination in oxidation process is reduced by one order of magnitude.

关 键 词：电荷耦合器件 氧化工艺 Fe离子沾污 表面光电压 

分 类 号：TN386.5[电子电信—物理电子学]