大电流密度下倒装芯片凸点的剪切蠕变性能  

Shear creep behavior of flip-chip solder in large current action

作　　者：柴駪[1] 安兵[1] 

机构地区：[1]华中科技大学材料学院,武汉430074

出　　处：《中国科技论文》2013年第8期764-767,共4页China Sciencepaper

基　　金：高等学校博士学科点专项科研基金资助项目(20090142120041);国家自然科学基金资助项目(60876070)

摘　　要：以倒装芯片为对象,通过自行设计研发的试验装置,研究电-热-应力耦合场中无铅互连焊点的蠕变规律与组织结构演变。研究表明,在加入大电流,达到电迁移门槛值的条件下,电流会减缓倒装芯片凸点的蠕变过程,凸点断裂主要是受到金属间化合物界面形态控制,反映了与绝热蠕变样品的巨大差异。This paper aims to investigate the interconnected solder joints of the flip-chip and explore their creep behavior and structural evolution under the current,thermal and stress coupling fields through self-designed experimental device.Results show that,when adding the large current to reach the threshold value of electromigration,the creep process of flip-chip bumps is slowed down by the current.The fracture of these joints is controlled by IMC interface morphology,which leads to huge differences in the creep behavior under the isothermal condition.

关 键 词：倒装芯片 电流密度 蠕变 电迁移 界面化学 

分 类 号：TN405[电子电信—微电子学与固体电子学]