Effect of TMGa flux on GaN films deposited on Ti coated on glass substrates at low temperature  

作　　者：WANG EnPing BIAN JiMing QIN FuWen ZHANG Dong LIU YueMei ZHAO Yue DUAN ZhongWei WANG Shuai 

机构地区：[1]School of Physics and Optoelectronic Technology,Dalian University of Technology [2]Key Laboratory of Materials Modification by Laser,Ion and Electron Beams (Ministry of Education),Dalian University of Technology [3]Key Laboratory of Inorganic Coating Materials,Chinese Academy of Sciences

出　　处：《Chinese Science Bulletin》2013年第30期3617-3623,共7页

基　　金：supported by the Opening Project of Key Laboratory of Inorganic Coating Materials,Chinese Academy of Sciences(KLICM2012-01);the Fundamental Research Funds for the Central Universities(DUT13LK02,DUT13JN08)

摘　　要：Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium source.The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman scattering.The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm.The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)curve.The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system （ECR-PEMOCVD） with trimethyl gallium （TMGa） as gallium source. The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction （RHEED）, X-ray diffraction analysis （XRD）, atomic force microscopy （AFM） and Raman scattering. The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm. The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage （I-V） curve. The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.

关 键 词：GAN薄膜 玻璃基板 薄膜沉积 钛涂层 流量 ECR-PEMOCVD 低温 化学气相沉积系统 

分 类 号：O484.1[理学—固体物理] TN304.23[理学—物理]