一种S频段GaN功率放大器的研制  

Design of GaN Power Amplifier Working in S Band

作　　者：崔浩[1] 罗维玲[1] 龚利鸣[1] 胡文宽[1] 

机构地区：[1]中国空间技术研究院西安分院,西安710000

出　　处：《空间电子技术》2013年第3期28-32,共5页Space Electronic Technology

摘　　要：氮化镓功率管的宽禁带、高击穿电场等特点,使其非常适合于宽带、高效率功率放大器的研制。为了研究GaN功率放大器的特点,使用了Agilent ADS软件进行了电路仿真设计,并制作了一种S频段GaN功率放大器。文章详述了电路仿真过程,并对设计的GaN功率放大器进行了测试,测试结果表明:设计的放大器在工作频段内输出功率大于41dBm,效率59.9%。Due to the features such as wide bandgap and high electricfield, GaN transistor is very fit to design wide band and high efficiency power amplifier. A S-band GaN power amplifier was designed and fabricated based on the Agilent ADS software to investage the properties of GaN power amplifier. The procedure of simulation design was described in detail, and the power amplifer was tested. The test result shows that the output power is more than 41 dBm, and the power added efficiency is 59.9 percent in working band.

关 键 词：GAN 仿真设计 宽禁带 半导体 功率放大器 

分 类 号：TN722.75[电子电信—电路与系统]