SiC_p/Cu电子封装材料研究进展  

Progress in SiC_p/Cu Electronic Packaging Materials

作　　者：刘猛[1] 李顺[1] 白书欣[1] 赵恂[1] 熊德赣[1] 

机构地区：[1]国防科学技术大学航天科学与工程学院,长沙410073

出　　处：《材料导报》2013年第19期130-134,共5页Materials Reports

摘　　要：详细介绍了SiCp/Cu电子封装材料的主要制备方法及应用情况,目前国内外SiCp/Cu电子封装材料的主要制备方法有粉末冶金法、放电等离子烧结法、无压浸渗法、压力浸渗法和反应熔渗法,其中包覆粉末热压烧结法和压力浸渗法是目前研发应用较广泛的两种方法。分析了SiC与Cu之间的界面反应机理,并指明SiCp/Cu电子封装材料的制备要解决的主要问题就是在SiC与Cu之间设置界面阻挡层,进而详细阐述了SiCp/Cu电子封装材料主要界面改性方法及其调控效果,并指出目前应用最好的两种方法是物理气相沉积法和化学气相沉积法。The main preparation methods and their application status of SiCp/Cu electronic packaging composites are introduced in detail. The main preparation methods both at home and abroad include powder metallurgy method, spark plasma sintering method, pressureless infiltration method, pressure infiltration method and reaction infiltration method, in which the powder metallurgy method and the pressure infiltration method are widily used at present. The mechanism of the inteffacial reaction between SiC and Cu are analyzed, and it is pointed out that the princi- pal problem to prepare SiCp/Cu electronic packaging composites is to restrain the interface reaction between SiC and Cu. Therefore, the controlling methods of the interracial reaction and their effects are discussed in detail. And the analysis indicated that the physical vaporous deposition method and the chemical vaporous depositon method are the best two methods.

关 键 词：电子封装材料 SICP CU 制备方法 界面反应界 面调控 

分 类 号：TB333[一般工业技术—材料科学与工程]